wpm 2341 a p -channel enhancement mode mosfet features z higher efficiency extending battery life z miniature sot23-3 surface mount package super high density cell design for extremely low rds (on) applications z dc/dc converter z load switch z battery powered system lcd display inverter power management in portable, battery powered products marking: pin connections : order information part number package shipping wpm2341 a r 3/tr sot23-3 3000 tape & reel p ? channel sot 23-3 2 1 3 w 41= specific device code u = date code w41 u 1 2 3 gate source drain g s d top view 2 3 1 z z z z absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 5 s steady state unit drain-source voltage v ds -20 gate-source voltage v gs 12 v t a continuous drain current (t j = 150 c) a t a =80c i d pulsed drain current i dm -20 continuous source current (diode conduction) a i s a t a =25c 1.25 0.75 maximum power dissipation a t a =80c p d w operating junction and storage temperature range t j , t stg - 55 to 150 c a. surface mounted on fr4 board using 1 in sq pad size,2oz cu. =25c -4.3 -3.5 -3.2 -2.5 -1.7 -1 0.7 0.42 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
mosfet electrical characteristics unless otherwise specified) parameter symbol test condition min typ max units off characteristics drain-source breakdown voltage bv dss v gs = 0v,i d = -250 a -20 v zero gate voltage drain current i dss v ds =-16v,v gs = 0v -1 a gate Csource leakage current i gss v gs = f ds = 0v f 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d =-250 a -0.63 v v gs = -4.5v, i d = - 3.3 am
static drain-source on-resistance r ds(on) v gs = -2.5v,i d = - 2.8 am
forward transconductance g fs v ds = - 5 v, i d = - 3.3 a 3 .0 s dynamic characteristics input capacitance c iss 7 00 pf output capacitance c oss 1 6 0 pf reverse transfer capacitance c rss v ds = - 6 v, v gs = 0v, f = 1.0 mhz 1 2 0 pf switching characteristics turn-on delay time t d(on) 25 ns turn-on rise time t r 55 ns turn-off delay time t d(off) 90 ns turn-off fall time t f v gs = -4.5v, v dd = - 6 v, i d = - 1.0 a, r g = 6.0
, 60 ns total gate charge q g(tot) 813 nc threshold gate charge q g(th) 0.2 nc gate-source charge q gs 1.2 nc gate-drain charge q gd v ds = - 6 v,i d = - 3.3 a, v gs =-4.5v 2.2 nc drain-source diode characteristics and maximun ratings forward diode voltage v sd v gs = 0v,i s = - 1.6 8 v -1.00 -0.35 61 5 2 71 6 5 a -0. (t j =25 thermal resistance ratings parameter symbol typical maximum unit t ? 5 s 75 100 junction-to-ambient thermal resistance b steady state r ja c/w b. surface mounted on fr4 board using 1 in sq pad size, 2oz cu. 125 165 ,v v 12 wpm 2341 a product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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